AP4959A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4959A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 13 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: SOP8
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AP4959A datasheet
..1. Size:1450K cn apm
ap4959a.pdf 
AP4959A -30V P+P Channel Enhancement Mode MOSFET Description The AP4959A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-18A DS D R
8.1. Size:177K ape
ap4959gm.pdf
AP4959GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D2 Lower Turn-on Voltage BVDSS -16V D2 D1 Simple Drive Requirement RDS(ON) 65m D1 Dual P MOSFET Package ID -4.7A G2 S2 SO-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized
9.1. Size:182K ape
ap4951gm.pdf
AP4951GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D2 D2 D1 Low Gate Charge RDS(ON) 96m D1 Fast Switching Performance ID -3.4A G2 S2 G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized d
9.2. Size:95K ape
ap4957agm-hf.pdf
AP4957AGM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best com
9.3. Size:97K ape
ap4951gm-hf.pdf
AP4951GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D2 D2 D1 Low Gate Charge RDS(ON) 96m D1 Fast Switching Performance ID -3.4A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with D2 D1 the best combin
9.4. Size:94K ape
ap4955gm-hf.pdf
AP4955GM-HF Halogen-Free Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Simple Drive Requirement BVDSS -20V D2 D1 Low Gate Charge RDS(ON) 45m D1 Fast Switching Characteristic ID -5.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best comb
9.5. Size:178K ape
ap4957agm.pdf
AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 26m D1 D1 Dual P MOSFET Package ID -7.4A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized de
9.6. Size:92K ape
ap4953gm-hf.pdf
AP4953GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 RoHS Compliant S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G
9.7. Size:94K ape
ap4955gm.pdf
AP4955GM RoHS-compliant Product Advanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Simple Drive Requirement BVDSS -20V D2 D1 Low Gate Charge RDS(ON) 45m D1 Fast Switching Characteristic ID -5.6A G2 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedize
9.8. Size:201K ape
ap4953gm.pdf
AP4953GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device
9.9. Size:72K ape
ap4957gm.pdf
AP4957GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS -30V D2 D2 Simple Drive Requirement RDS(ON) 24m D1 D1 Dual P MOSFET Package ID -7.7A G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the b
9.12. Size:1774K cn vbsemi
ap4951gm.pdf
AP4951GM www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi
9.13. Size:1753K cn vbsemi
ap4953m.pdf
AP4953M www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View
9.14. Size:864K cn vbsemi
ap4953gm.pdf
AP4953GM www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vie
9.15. Size:1931K cn apm
ap4957a.pdf
AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS D R
9.16. Size:1659K cn apm
ap4953b.pdf
AP4953B -20V P+P-Channel Enhancement Mode MOSFET Description The AP4953B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-6.5A DS D R
9.17. Size:1489K cn apm
ap4953a.pdf
AP4953A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4953A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-7A DS D R
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