AP5N20D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP5N20D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 48 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO252

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AP5N20D datasheet

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AP5N20D

AP5N20D 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener

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AP5N20D

AP5N20D-H 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D-H is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G

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AP5N20D

AP5N20K N-Channel Enhancement Mosfet Feature 200V,5A R

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AP5N20D

AP5N2K2EN1 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 0.9V Very Low Gate Drive BVDSS 50V D Lower Gate Charge RDS(ON) 2.2 G Fast Switching Performance ID 200mA RoHS Compliant & Halogen-Free HBM ESD 2KV S Description 2 1 Gate 2 Drain AP5N2K2E series are from Advanced Power innovated design 3 Sourc

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