ATM2320KNSQ Datasheet. Equivalente

 ..1. Size:815K  agertech
 atm2320knsq.pdf

ATM2320KNSQ 20V N-Channel Enhancement Mode MOSFET Descriptions The ATM2320KNSQ is N-Channel logic enhancement mode power field effect transistor which is produced using high cell density advanced trench technology to provide excellent R . DS(ON) This high density process is especially tailored to minimize on-state resistance. The device is particularly suited for low voltage application

 4.1. Size:749K  agertech
 atm2320knsa.pdf

ATM2320KNSA 20V N-Channel Enhancement Mode MOSFET Descriptions The ATM2320KNSA is N-Channel logic enhancement mode power field effect SOT-23 transistor which is produced using high cell density advanced trench technology to provide excellent R . DS(ON) This high density process is especially tailored to minimize on-state resistance. The device is particularly suited for low voltage appl

 9.1. Size:997K  agertech
 atm2312nsa.pdf

ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFET Drain-Source Voltage 20V Continuous Drain Current 5.0A FEATURES SOT-23 Small Package SOT-23 V =20V, I =5A DS D R 31.8m @V =4.5V DS(ON) GS R 35.6m @V =2.5V DS(ON) GS Advanced Trench Technology APPLICATIONS D Load Switching for portable Application 3 DC/DC Converter 1 2 G S Schematic d

 9.2. Size:510K  agertech
 atm2302bnsa.pdf

ATM2302BNSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 20V Drain Current 3A Features Trench Power LV MOSFET technology High power and current handing capability R

 9.3. Size:759K  agertech
 atm2305psa.pdf

ATM2305PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -15V Drain Current -5.6A Features Trench FET Power MOSFET Excellent RDS(on) and Low Gate Charge RDS(ON)( at VGS=-4.5V) 36.4 mohm RDS(ON)( at VGS=-2.5V) 53.0 mohm RDS(ON)( at VGS=-1.8V) 62.0 mohm Applications Battery protection Load switch Power manag

 9.4. Size:497K  agertech
 atm2301psc.pdf

ATM2301PSC P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -20V Drain Current -3A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 9.5. Size:445K  agertech
 atm2301psa.pdf

ATM2301PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -20V Drain Current -2.5A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 9.6. Size:2272K  agertech
 atm2306nsa.pdf

ATM2306NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 3.16A DESCRIPTION The ATM2306NSA uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or DC/DC converter . FEATURES V =30V 1Gate 2Source 3Drain DS(V) SOT-23 Plastic Package I =3.16A D R ) 47m @10V

 9.7. Size:607K  agertech
 atm2302nsa.pdf

ATM2302NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 20V Drain Current 3.3A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 9.8. Size:2247K  agertech
 atm2300nsa.pdf

 9.9. Size:1353K  agertech
 atm2310nsa.pdf

ATM2310NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 60V Drain Current 3A Description The ATM2310NSA uses advanced trench technology to provide excellent R , low gate charge and operation with gate voltages DS(ON) as low as 2.5V.This device is suitable for use as Battery protection or in other Switching application. Features High power and current h