AP6N03SI Datasheet. Equivalente

 ..1. Size:966K  cn apm
 ap6n03si.pdf

AP6N03SI 30V N-Channel Enhancement Mode MOSFET Description The AP6N03SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R

 8.1. Size:1484K  cn apm
 ap6n03li.pdf

AP6N03LI 30V N-Channel Enhancement Mode MOSFET Description The AP6N03LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R

 9.1. Size:241K  ape
 ap6n023h.pdf

AP6N023H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 60V Lower Gate Charge RDS(ON) 23m Fast Switching Characteristic ID 25.4A G G RoHS Compliant & Halogen-Free S S Description G AP4604 seriesare from Advanced Power innovated design AP6N023series arefrom Advanced Power innovated

 9.2. Size:178K  ape
 ap6n090k.pdf

AP6N090K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID3 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve

 9.3. Size:220K  ape
 ap6n021m.pdf

AP6N021M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D D Simple Drive Requirement D RDS(ON) 21m D Fast Switching Characteristic ID3 7.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP6N021 series are from Advanced Power innovated design and silicon process technology to

 9.4. Size:171K  ape
 ap6n090g.pdf

AP6N090G Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A S RoHS Compliant & Halogen-Free D SOT-89 G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the

 9.5. Size:210K  ape
 ap6n090y.pdf

AP6N090Y Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement S BVDSS 60V D Lower Gate Charge RDS(ON) 90m D Fast Switching Characteristic ID3 3.5A G D RoHS Compliant & Halogen-Free SOT-26 D Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achi

 9.6. Size:188K  ape
 ap6n090n.pdf

AP6N090N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 90m Surface Mount Device ID 2.5A S RoHS Compliant & Halogen-Free SOT-23S G Description D AP6N090 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 9.7. Size:1431K  cn apm
 ap6n04si.pdf

AP6N04SI 40V N-Channel Enhancement Mode MOSFET Description The AP6N04SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =6A DS D R