AP70P03NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70P03NF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 255 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm

Encapsulados: PDFN5X6-8L

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AP70P03NF datasheet

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AP70P03NF

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R

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AP70P03NF

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AP70P03NF

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS D R

 7.3. Size:1495K  cn apm
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AP70P03NF

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS D R

MOSTRAR MÁS

Otros transistores... ATM3003PSA, ATM3400NSA, ATM3401APSA, ATM3401PSA, AP6H03S, AP6N03LI, AP6N03SI, AP6N04SI, MMIS60R580P, AP7N50D, AP80P06NF, AP20P02BF, AP20P02D, AP20P02SI, AP20P03D, AP20P03DF, AP20P04D