AP25G04GD Todos los transistores

 

AP25G04GD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP25G04GD
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.2 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO252-4L
 

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AP25G04GD Datasheet (PDF)

 ..1. Size:1513K  cn apm
 ap25g04gd.pdf pdf_icon

AP25G04GD

AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =28 A DS DR

 8.1. Size:2013K  cn apm
 ap25g02nf.pdf pdf_icon

AP25G04GD

AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS DR

 8.2. Size:1571K  cn apm
 ap25g03gd.pdf pdf_icon

AP25G04GD

AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS DR

 9.1. Size:67K  ape
 ap25g45em.pdf pdf_icon

AP25G04GD

AP25G45EMAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emi

MOSTRAR MÁS

Otros transistores... AP20P03D , AP20P03DF , AP20P04D , AP220N08TLG1 , AP220N10MP , AP2222D , AP25G02NF , AP25G03GD , 50N06 , AP25N04D , AP25N04S , , , , , , .

History: AP25N04D | AP2222D | AP25G02NF

 

 
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