AP25G04GD MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: AP25G04GD

..1. Size:1513K cn apm
ap25g04gd.pdf pdf_icon

AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =28 A DS D R

8.1. Size:2013K cn apm
ap25g02nf.pdf pdf_icon

AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS D R

8.2. Size:1571K cn apm
ap25g03gd.pdf pdf_icon

AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS D R

9.1. Size:67K ape
ap25g45em.pdf pdf_icon

AP25G45EM Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 150A C C 4.5V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emi