AP25G04GD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP25G04GD  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.2 nS

Cossⓘ - Capacitancia de salida: 76 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO252-4L

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AP25G04GD datasheet

 ..1. Size:1513K  cn apm
 ap25g04gd.pdf pdf_icon

AP25G04GD

AP25G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The AP25G04GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =28 A DS D R

 8.1. Size:2013K  cn apm
 ap25g02nf.pdf pdf_icon

AP25G04GD

AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS D R

 8.2. Size:1571K  cn apm
 ap25g03gd.pdf pdf_icon

AP25G04GD

AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS D R

 9.1. Size:67K  ape
 ap25g45em.pdf pdf_icon

AP25G04GD

AP25G45EM Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 150A C C 4.5V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emi

MOSTRAR MÁS

Otros transistores... AP20P03D, AP20P03DF, AP20P04D, AP220N08TLG1, AP220N10MP, AP2222D, AP25G02NF, AP25G03GD, 50N06, AP25N04D, AP25N04S, AP4406A, AP4406B, AP4407A, AP4407B, AP4409A, AP4435A