AP65N06NF Todos los transistores

 

AP65N06NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP65N06NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 199.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PDFN5X6-8L

 Búsqueda de reemplazo de MOSFET AP65N06NF

 

Principales características: AP65N06NF

 ..1. Size:1552K  cn apm
 ap65n06nf.pdf pdf_icon

AP65N06NF

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 7.1. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N06NF

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 7.2. Size:1844K  cn apm
 ap65n06d.pdf pdf_icon

AP65N06NF

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 8.1. Size:1522K  cn apm
 ap65n04df.pdf pdf_icon

AP65N06NF

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R

MOSTRAR MÁS

Otros transistores... ATM7414NDH , ATM7N65ATE , ATM8205DNPD , ATM8205DNSG , ATM9435PPA , AP60P03D , AP65N03DF , AP65N04DF , AO3401 , AP68N04DF , AP68N04NF , AP6946A , AP6G03LI , AP260N12TLG1 , AP30N10Y , AP30N15D , AP30N20P .

History: AP65N04DF | JMSH1552PK | 2SJ552

 

 
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