2N7002VAC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002VAC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.15 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.28 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 7.5 Ohm

Empaquetado / Estuche: SOT563

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2N7002VAC Datasheet (PDF)

3.1. 2n7002vgp.pdf Size:166K _update-mosfet

CHENMKO ENTERPRISE CO.,LTD 2N7002VGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. (SOT-563) * High density cell design for low RDS(ON) * Suitable for high packing density. (1) (S1) (D1)(6) * Rug

3.2. 2n7002v-va.pdf Size:506K _fairchild_semi

April 2010 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features � Dual N-Channel MOSFET � Low On-Resistance � Low Gate Threshold Voltage � Low Input Capacitance � Fast Switching Speed � Low Input/Output Leakage � Ultra-Small Surface Mount Package � Lead Free By Design/RoHS Compliant (Pin4) SOT-563F Marking : AB Marking : AC * Pin1 and Pin4 are exchangeable. Absolu

3.3. 2n7002vc-vac.pdf Size:124K _diodes

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data � Dual N-Channel MOSFET � Case: SOT-563 � Low On-Resistance � Case Material: Molded Plastic, �Green� Molding Compound. UL Flammability Classification Rating 94V-0 � Low Gate Threshold Voltage � Moisture Sensitivity: Level 1 per J-STD-020C � Low Input Capacitance � Terminal Connections: Se

Otros transistores... ZXMN3F31DN8 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S , IRFZ44 , 2N7002VC , STU438S , BS870 , BSN20 , BSS138DW , STU438A , DMB53D0UDW , DMB53D0UV .

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