AP60N04NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS DR

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS DR

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS DR

AP60N03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

AP60N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP60N03 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

AP60N03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS CompliantSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

AP60N03D 30V N-Channel Enhancement Mode MOSFET Description The AP60N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

AP60N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

AP60N06F 60V N-Channel Enhancement Mode MOSFET Description The AP60N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =60A DS DR

AP60N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

AP60N03P 30V N-Channel Enhancement Mode MOSFET Description The AP60N03P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60 A DS DR

AP60N03FITIP 30V N-Channel Enhancement Mode MOSFET Description The AP60N03F/T/P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

AP60N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP60N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =60A DS DR