AGMH6035D Datasheet. Equivalente

 ..1. Size:1110K  cn agmsemi
 agmh6035d.pdf

AGMH6035D General Description Product Summary The AGMH6035D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 60V 3.6m 125A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to mini

 7.1. Size:799K  cn agmsemi
 agmh603h.pdf

AGMH603H General Description Product Summary The AGMH603H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal DS(ON) for load switch and battery protection applications. BVDSS RDSON ID Features 60V 2.5m 180A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

 8.1. Size:1494K  cn agmsemi
 agmh606c.pdf

AGMH606C General Description Product Summary The AGMH606C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal switch and battery for load 60V 5.3m 80A protection applications. Features TO-220 Pin Configuration Advance high cell density Trench technology Low R to minimi

 8.2. Size:1457K  cn agmsemi
 agmh605c.pdf

AGMH605C Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 68 -- -- V Zero Gate Voltage Drain Current V =68V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 8.3. Size:1531K  cn agmsemi
 agmh606h.pdf

AGMH606H General Description Product Summary The AGMH606H combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 5.4m 80A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to minimiz

 8.4. Size:913K  cn agmsemi
 agmh6080h.pdf

AGMH6080H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 8.5. Size:1635K  cn agmsemi
 agmh6018c.pdf

AGMH6018C General Description Product Summary The AGMH6018C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 60V 1.9m 150A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min