AGM30P35D Todos los transistores

 

AGM30P35D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM30P35D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
   Paquete / Cubierta: TO252
 

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AGM30P35D Datasheet (PDF)

 ..1. Size:1193K  cn agmsemi
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AGM30P35D

AGM30P35D General DescriptionProduct SummaryThe AGM30P35D combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 36.5m -20Aprotection applications.TO-252 Pin Configuration Features Advance high cell density Trench technologyR to minimize cond

 6.1. Size:1276K  cn agmsemi
 agm30p35s.pdf pdf_icon

AGM30P35D

AGM30P35S General DescriptionProduct SummaryThe AGM30P35S combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -6Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyR to minimize conduct

 6.2. Size:1239K  cn agmsemi
 agm30p35m.pdf pdf_icon

AGM30P35D

AGM30P35M General DescriptionProduct SummaryThe AGM30P35M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 33m -5.4Aprotection applications. FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to minimize conduct

 6.3. Size:1266K  cn agmsemi
 agm30p35ap.pdf pdf_icon

AGM30P35D

AGM30P35AP General DescriptionProduct SummaryThe AGM30P35AP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -16Aprotection applications.PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technologyR to minimi

MOSTRAR MÁS

Otros transistores... AGM30P20S , AGM30P25AP , AGM30P25D , AGM30P25M , AGM30P25MBP , AGM30P25MBQ , AGM30P25S , AGM30P35AP , AON7403 , AGM30P35M , AGM30P35S , AGM30P55A , AGM30P55D , AGM30P55D1 , AGM30P85D , , .

History: AGM30P35M

 

 
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