AGM30P55D1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM30P55D1 General DescriptionProduct SummaryThe AGM30P55D1 combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 6.5m -65A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to mi

AGM30P55D General DescriptionThe AGM30P55D combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications. BVDSS RDSON ID Features-30V 5m -65AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

AGM30P55AFig.1 Power Dissipation Derating Curve Fig.2 Typical output CharacteristicsV =-10VGSV =-4.5VGSFig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain CurrentFig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperaturewww.agm-mos.com 3 VER2.68AGM30P55AFig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform

AGM30P25MBP General DescriptionThe AGM30P25MBP combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery-30V 20m -8Aprotection applications. Features PDFN3*3 Pin Configuration Advance high cell density Trench technologyR to minimize c

AGM30P25SCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.5AGM30P25SGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA TH

AGM30P10AFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature (C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P12D General DescriptionProduct SummaryThe AGM30P12D combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 11m -35A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minim

AGM30P25MBQTable 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-30V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V

AGM30P05AP General DescriptionThe AGM30P05AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features-30V 5.5m -60AAdvance high cell density Trench technology Low R to minimize conductive lossD

AGM30P20MCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance -I =f(-V ) R = f(T ); I =-8A; V =-10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.7AGM30P20MGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-2

AGM30P110DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P35S General DescriptionProduct SummaryThe AGM30P35S combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -6Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyR to minimize conduct

AGM30P35M General DescriptionProduct SummaryThe AGM30P35M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 33m -5.4Aprotection applications. FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to minimize conduct

AGM30P100DTypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM30P25APTable 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-30V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V

AGM30P100ATypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM30P85DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V

AGM30P18S General DescriptionProduct SummaryThe AGM30P18S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 7.0m -17A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimi

AGM30P35AP General DescriptionProduct SummaryThe AGM30P35AP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 34.5m -16Aprotection applications.PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technologyR to minimi

AGM30P08APP- Channel Typical CharacteristicsTC=25impulse=250uS-4.5V-6V-10V-3.5V25-3V-2.5 V-Vds Drain-Source Voltage (V)-Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsNoteTJ=25VGS= 0V25VGS= -4.5VVGS= -10V-ID - Drain Current (A) -VF ,Forward Voltage (V)Figure 3. On-Resistance Variation vs F

AGM30P20DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P08DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V

AGM30P25M General DescriptionProduct SummaryThe AGM30P25M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 22m -8Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyR to minimize conductiv

AGM30P10SR General DescriptionProduct SummaryThe AGM30P10SR combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 9.3m -15A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to mini

AGM30P25D General DescriptionProduct SummaryThe AGM30P25D combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 21m -12Aprotection applications.TO-252 Pin Configuration Features Advance high cell density Trench technologyR to minimize conduc

AGM30P110ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P16SCissVgsCossCrssQgVdsFig.3 Power Dissipation Derating Curve Fig.4 Typical output CharacteristicsV =-10VGSV =-4.5VGSFig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Currentwww.agm-mos.com 3 VER2.68AGM30P16SFig.9 Switching Time Measurement Circuit Fig.10 Gate Charge WaveformFig.11 Switching Time Measurement Circuit Fig.12 Gate

AGM30P12MFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature (C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P14MBP -Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 7 Capacitance vs Vds Figure 9 Power De-rating -Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 8 Safe Operation Area Figure 10 ID Current Derating Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68C Capacitance (pF)Po

AGM30P10K Typical CharacteristicsPower Capability Current Capability 60 5550504540403530302520201510105 TC=25oC,VG= -10VTC=25oC0 00 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160Tmp Mounting Point Temp. ( Tmp Mounting Point Temp. (C) C) Safe Operating Area Transient Thermal Impedance 100 21Duty = 0.51ms0.2

AGM30P20APCharacteristics Curvewww.agm-mos.com 3 VER2.68AGM30P20APFigure7 Safe Operation AreaFigure8 Normalized Maximum Transient Thermal Impedancewww.agm-mos.com 4 VER2.68AGM30P20APDimensionsPDFN3.3*3.3MILLIMETERDSYMBOLMIN Typ. MAXA 0.700 0.800 0.900bA1 0.152REF.A2 0~0.05D 3.000 3.100 3.200D1 2.300 2.450 2.600D1E 2.900 3.000 3.100E1 3.1

AGM30P10APP- Channel Typical Characteristics-3VTC=25impulse=250uS-3.5V -4.5V 25-6V-10V-2.5VVds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsVGS= 0VNoteTJ=25VGS=-4.5V25VGS=-10V-V F ,Forward Voltage [V]-I D - Drain Current (A)Figure 4. Body Diode Forward Voltage F

AGM30P18ETable 3. Electrical Characteristics (TA=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM30P16DTypical Electrical and Thermal Characteristics (Curves)-Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge -ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figu

AGM30P05D General DescriptionThe AGM30P05D combines advanced trenchMOSFET technology with a low resistance packageProduct Summaryto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID FeaturesAdvance high cell density Trench technology-30V 5.5m -75A Low R to minimize conductive lossDS(

AGM30P05A General DescriptionThe AGM30P05A combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features-30V 5.5m -75AAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to mi

AGM30P08A General DescriptionThe AGM30P08A combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and batteryprotection applications.-30V 7.0m -60A Features Advance high cell density Trench technology PDFN5*6 Pin ConfigurationR to minimize con

AGM30P10S General DescriptionProduct SummaryThe AGM30P10S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 12m -14A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimiz

AGM30P16AP General DescriptionThe AGM30P16AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features-30V 11m -21AAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R

AGM30P35D General DescriptionProduct SummaryThe AGM30P35D combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -30V 36.5m -20Aprotection applications.TO-252 Pin Configuration Features Advance high cell density Trench technologyR to minimize cond

AGM30P20S General DescriptionProduct SummaryThe AGM30P20S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-30V 15.5m -11A Features Advance high cell density Trench technology SOP8 Pin ConfigurationLow R to minimize co