AGM1075MBP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM1075MBP  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 nS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: PDFN3.3X3.3

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AGM1075MBP datasheet

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AGM1075MBP

AGM1075MBP General Description The AGM1075MBP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 65m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to

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AGM1075MBP

AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 3 VER2.71 AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 4 VER2.71 AGM1075MNA Dimensions PDFN5*6 D3 D MILLIMETER SYMBOL MIN Typ. MAX A 0.900 1.000 1.100 A1 0.254 REF. A2 0 0.05 D 4.824 4.900 4.976 D1 1.605 1.705 1.805 D2 0.500 0.600 0.700 D3 4.924 5.000 5.076 E 5.924 6.000

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AGM1075MBP

AGM1075MN Test Circuit 1 EAS test circuit 2 Gate charge test circuit 3 Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM1075MN Typical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance F

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AGM1075MBP

AGM1075-G Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM1075-G SOT23-3 Marking Inst

MOSTRAR MÁS

Otros transistores... AGM035N10H, AGM038N10A, AGM03N85H, AGM042N10A, AGM1030MBP, AGM1030MNA, AGM1075D, AGM1075-G, 8205A, AGM1075MN, AGM1075MNA, AGM1075S, AGM1095MAP, AGM1095MN, AGM1099D, AGM1099E, AGM1099EY