AGM1099EY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM1099EY General DescriptionProduct SummaryThe AGM1099EY combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 92m 5.0A FeaturesAdvance high cell density Trench technologySOT89-3 Pin ConfigurationLow R to mi

AGM1099ETable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

AGM1099EL General DescriptionProduct SummaryThe AGM1099EL combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 100m 5.0A FeaturesAdvance high cell density Trench technologySOT-23 Pin ConfigurationLow R to mi

AGM1099S General DescriptionProduct SummaryThe AGM1099S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 100m 7.0A FeaturesAdvance high cell density Trench technologySOP8 Pin ConfigurationLow R to minimi

AGM1099DCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistanceI =f(V ) R =f(T );I =6A; V =10VD GS DS(on) j D GSwww.agm-mos.com 3 VER2.73AGM1099DGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j D BR