AGM1099EY Todos los transistores

AGM1099EY General Description Product Summary The AGM1099EY combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 92m 5.0A Features Advance high cell density Trench technology SOT89-3 Pin Configuration Low R to mi

AGM1099E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage

AGM1099EL General Description Product Summary The AGM1099EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 5.0A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi

AGM1099S General Description Product Summary The AGM1099S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 7.0A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi

AGM1099D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =6A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.73 AGM1099D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j D BR