AGM10N15D Todos los transistores

AGM10N15D General Description TheAGM10N15D combines advanced trench MOSFET to provide technology with a low resistance package Product Summary extremely low R DS(ON) This device is ideal and battery for load switch protection applications. BVDSS RDSON ID Features 150V 196m 8.6A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

AGM10N15R General Description Product Summary TheAGM10N15R combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) This device is ideal and battery BVDSS RDSON ID for load switch protection applications. 150V 245m 8.2A Features Advance high cell density Trench technology SOT-223 Pin Configuration Low R to minimize c

AGM10N65F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 650 -- -- V Zero Gate Voltage Drain Current V =650V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 30V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage

AGM1010A-E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VDS 90% 10% VGS Td(on) Tr Td(off) Tf Ton Toff Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform www.agm-mos.com 4 VER2.72 AGM1010A-E PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 6 VER2.72 AGM1010A-E Disclaimer The information provided in this document is believed to be accurate and relia

AGM1095MN General Description Product Summary The AGM1095MN combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 95m 6.8A Features SOP8 Pin Configuration Advance high cell density Trench technology Low R to minimize cond

AGM1075MBP General Description The AGM1075MBP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 65m 12A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to

AGM1075-G Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM1075-G SOT23-3 Marking Inst

AGM1075D General Description Product Summary The AGM1075D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 100V 55m 16A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize cond

AGM1030MA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold

AGM1099E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage

AGM1095MAP General Description The AGM1095MAP combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery 100V 96m 7A protection applications. Features -100V 220m -6A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configurat

AGM1099EY General Description Product Summary The AGM1099EY combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 92m 5.0A Features Advance high cell density Trench technology SOT89-3 Pin Configuration Low R to mi

AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 3 VER2.71 AGM1075MNA Typical Characteristics (TJ =25 Noted) www.agm-mos.com 4 VER2.71 AGM1075MNA Dimensions PDFN5*6 D3 D MILLIMETER SYMBOL MIN Typ. MAX A 0.900 1.000 1.100 A1 0.254 REF. A2 0 0.05 D 4.824 4.900 4.976 D1 1.605 1.705 1.805 D2 0.500 0.600 0.700 D3 4.924 5.000 5.076 E 5.924 6.000

AGM1095M General Description Product Summary The AGM1095M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery 100V 100m 7A protection applications. -100V 240m -6A Features SOP8 Pin Configuration Advance high cell density Trench technology R to

AGM1099EL General Description Product Summary The AGM1099EL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 5.0A Features Advance high cell density Trench technology SOT-23 Pin Configuration Low R to mi

AGM1075S General Description Product Summary The AGM1075S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 62m 10A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize

AGM1099S General Description Product Summary The AGM1099S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 100m 7.0A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi

AGM1099D Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =6A; V =10V D GS DS(on) j D GS www.agm-mos.com 3 VER2.73 AGM1099D Gate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH j D BR

AGM1030MBP General Description Product Summary The AGM1030MBP combines advanced trench to MOSFET technology with a low resistance package provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 100V 26m 20A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R t

AGM1075MN Test Circuit 1 EAS test circuit 2 Gate charge test circuit 3 Switch Time Test Circuit www.agm-mos.com 3 VER2.55 AGM1075MN Typical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance F

AGM1010A-F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 100 -- -- V Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltag

AGM1030MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag

AGM1010A2 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage