AGM13T05A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM13T05ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 140GS DDSS 145 -- VZero Gate Voltage Drain Current V =135V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM13T15A General DescriptionProduct SummaryThe AGM13T15A combines advanced trenchMOSFET technology with a low resistance package to provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.135V 16m 58A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to mi

AGM13T15D General DescriptionProduct SummaryThe AGM13T15D combines advanced trenchMOSFET technology with a low resistance package to provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.135V 15.5m 58A FeaturesAdvance high cell density Trench technologyTO-252 Pin ConfigurationLow R to m

AGM13T30ATest Circuit1) E test CircuitAS2) Gate charge test Circuit3) Switch Time Test Circuitwww.agm-mos.com 3 VER2.55AGM13T30ATypical Electrical and Thermal CharacteristicsVds Drain-Source Voltage (V) TJ-Junction Temperature()Figure 1 Output Characteristics Figure 4 Rdson-Junction TemperatureVgs Gate-Source Voltage (V) Qg Gate Charge (nC)Figure 2 Transfer Chara

AGM13T15C General DescriptionProduct SummaryThe AGM13T15C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.135V 15.5m 58A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to mi

AGM13T30D General DescriptionProduct SummaryThe AGM13T30D combines advanced trenchMOSFET technology with a low resistance package to provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.135V 32.5m 30A FeaturesAdvance high cell density Trench technologyTO-252 Pin ConfigurationLow R to m