AGM15T06H Todos los transistores

 

AGM15T06H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM15T06H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 958 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO263
 

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AGM15T06H datasheet

 ..1. Size:1457K  cn agmsemi
 agm15t06h.pdf pdf_icon

AGM15T06H

AGM15T06H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 6.1. Size:2043K  cn agmsemi
 agm15t06c-b.pdf pdf_icon

AGM15T06H

AGM15T06C-B Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 140 147 -- V GS D DSS Zero Gate Voltage Drain Current V =140V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt

 6.2. Size:1401K  cn agmsemi
 agm15t06ll.pdf pdf_icon

AGM15T06H

AGM15T06LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage

 6.3. Size:1427K  cn agmsemi
 agm15t06t.pdf pdf_icon

AGM15T06H

AGM15T06T Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

MOSTRAR MÁS

Otros transistores... AGM12T08A , AGM12T12A , AGM12T12C , AGM12T12D , AGM13T05A , AGM15T05LL , AGM15T06C , AGM15T06C-B , 2SK3568 , AGM15T06LL , AGM15T06T , AGM15T13A , AGM15T13C , AGM15T13D , AGM15T13F , AGM15T13H , AGM15T16C .

 

 
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