AGM15T13A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM15T13A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 254 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 99 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 720 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de AGM15T13A MOSFET
AGM15T13A datasheet
agm15t13a.pdf
AGM15T13A Typical Electrical and Thermal Characteristics 150 150 VGS = 10V VDS = 5.0V 8.0V VGS = 6.0V 7.0V 120 120 VGS = 5.5V 90 90 TJ = 175 C VGS = 5.0V 60 60 VGS = 4.8V TJ = 25 C 30 30 VGS = 4.5V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 2 Transfer Characteristics Figure 1 Output Characteristics 5
agm15t13h.pdf
AGM15T13H Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V
agm15t13d.pdf
AGM15T13D Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V
agm15t13f.pdf
AGM15T13F Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V
Otros transistores... AGM12T12D , AGM13T05A , AGM15T05LL , AGM15T06C , AGM15T06C-B , AGM15T06H , AGM15T06LL , AGM15T06T , RFP50N06 , AGM15T13C , AGM15T13D , AGM15T13F , AGM15T13H , AGM15T16C , AGM15T16D , AGM16N10C , AGM16N10D .
History: 2N4416AC1D
History: 2N4416AC1D
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