AGM15T13F Todos los transistores

 

AGM15T13F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM15T13F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 254 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 99 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 316 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO220F
 

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AGM15T13F datasheet

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agm15t13f.pdf pdf_icon

AGM15T13F

AGM15T13F Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V

 6.1. Size:1224K  cn agmsemi
agm15t13a.pdf pdf_icon

AGM15T13F

AGM15T13A Typical Electrical and Thermal Characteristics 150 150 VGS = 10V VDS = 5.0V 8.0V VGS = 6.0V 7.0V 120 120 VGS = 5.5V 90 90 TJ = 175 C VGS = 5.0V 60 60 VGS = 4.8V TJ = 25 C 30 30 VGS = 4.5V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 2 Transfer Characteristics Figure 1 Output Characteristics 5

 6.2. Size:1020K  cn agmsemi
agm15t13h.pdf pdf_icon

AGM15T13F

AGM15T13H Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V

 6.3. Size:1035K  cn agmsemi
agm15t13d.pdf pdf_icon

AGM15T13F

AGM15T13D Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- V GS D DSS -- Zero Gate Voltage Drain Current V =150V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V

Otros transistores... AGM15T06C , AGM15T06C-B , AGM15T06H , AGM15T06LL , AGM15T06T , AGM15T13A , AGM15T13C , AGM15T13D , 18N50 , AGM15T13H , AGM15T16C , AGM15T16D , AGM16N10C , AGM16N10D , AGM302C1 , AGM302D1 , AGM303A .

History: NCEP11N10AS | BF1101

 

 
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