AGM304A Todos los transistores

 

AGM304A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM304A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 305 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: PDFN5X6
 

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AGM304A datasheet

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AGM304A

AGM304A General Description Product Summary The AGM304A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 2.8m 100A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minimi

 0.1. Size:991K  cn agmsemi
agm304ap.pdf pdf_icon

AGM304A

AGM304AP General Description The AGM304AP combines advanced trench Product Summary MOSFETtechnology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 3.8m 40A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi

 0.2. Size:972K  cn agmsemi
agm304ap-b.pdf pdf_icon

AGM304A

AGM304AP-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm

 0.3. Size:1271K  cn agmsemi
agm304a-b.pdf pdf_icon

AGM304A

AGM304A-B TYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1 On-Region Characteristics (Note E) Figure 4 On-Resistance vs. Junction Figure 3 On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5 On-Resistance vs. Gate-Source Figure 6 Body-Diode Characteristics (Note E) Voltage (Note E) www.agm-

Otros transistores... AGM302C1 , AGM302D1 , AGM303A , AGM303AP , AGM303D , AGM303D1 , AGM303MNA , AGM3045A , 7N60 , AGM304A-B , AGM304AP , AGM304AP-B , AGM304D , AGM304MNQ , AGM304S , AGM18N20D , AGM18N20H .

History: BUZ91A | IRLML2803PBF | CMPDM7002AHC | BL50N30-W | AGM13T05A | STL23N85K5 | AGM1405F

 

 
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