AGM304A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM304A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 305 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de AGM304A MOSFET
AGM304A Datasheet (PDF)
agm304a.pdf
AGM304A General DescriptionProduct SummaryThe AGM304A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.30V 2.8m 100A FeaturesPDFN5*6 Pin ConfigurationAdvance high cell density Trench technologyLow R to minimi
agm304ap.pdf
AGM304AP General DescriptionThe AGM304AP combines advanced trenchProduct SummaryMOSFETtechnology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 3.8m 40A FeaturesAdvance high cell density Trench technology PDFN3.3*3.3 Pin ConfigurationLow R to mi
agm304ap-b.pdf
AGM304AP-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm
agm304a-b.pdf
AGM304A-BTYPICAL ELECTRICAL AND THERMAL CHARACTERIS Figure 2 Transfer Characteristics (Note E) Figure 1On-Region Characteristics (Note E) Figure 4: On-Resistance vs. Junction Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) Temperature (Note E) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics (Note E)Voltage (Note E) www.agm-
Otros transistores... AGM302C1 , AGM302D1 , AGM303A , AGM303AP , AGM303D , AGM303D1 , AGM303MNA , AGM3045A , IRF830 , AGM304A-B , AGM304AP , AGM304AP-B , AGM304D , AGM304MNQ , AGM304S , , .
History: AGM304D | AGM304AP
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM304S | AGM304MNQ | AGM304D | AGM304AP-B | AGM304AP | AGM304A-B | AGM304A | AGM3045A | AGM303MNA | AGM303D1 | AGM303D | AGM303AP | AGM303A | AGM302D1 | AGM302C1 | AGM16N10D
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