AGM18N20H Datasheet. Equivalente

 ..1. Size:521K  cn agmsemi
 agm18n20h.pdf

AGM18N20H General Description Product Summary The AGM18N20H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal switch and battery for load 200V 120m 18A protection applications. Features TO-263 Pin Configuration Advance high cell density Trench technology D Low R to

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 agm18n20d.pdf

AGM18N20D Table3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -- V GS D DSS 200 -- Zero Gate Voltage Drain Current V =200V,V =0V -- 1 A DS GS I -- DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V =V

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 agm18n10ap.pdf

AGM18N10AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

 8.2. Size:1257K  cn agmsemi
 agm18n10mna.pdf

AGM18N10MNA Typical Performance Characteristics Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain D

 8.3. Size:1219K  cn agmsemi
 agm18n10i.pdf

AGM18N10I Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM18N10I Figure 13. Maximum Eff

 8.4. Size:1612K  cn agmsemi
 agm18n10a.pdf

AGM18N10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

 8.5. Size:1476K  cn agmsemi
 agm18n10s.pdf

AGM18N10S General Description Product Summary The AGM18N10S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 100V 17m 12A Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize