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AGM205D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 20 -- -- V GS D DSS Zero Gate Voltage Drain Current V =20V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 12V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

AGM20N65F General Description Product Summary The AGM20N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 650V 0.36 20A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to m

AGM20P22AS Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; V =-4.5V D GS DS(on) j D GS www.agm-mos.com 3 VER2.5 AGM20P22AS Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

AGM20T09C AGM20T09C Typical Characteristics www.agm-mos.com 3 VER2.7 AGM20T09C www.agm-mos.com 4 VER2.7 AGM20T09C Test Circuits and Waveforms Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit Fig. 1.2 Peak Diode Recovery dv/dt Waveforms www.agm-mos.com 5 VER2.7 AGM20T09C Test Circuits and Waveforms (Cont.) www.agm-mos.com 6 VER2.7 AGM20T09C TO-220 PACKAGE INFORMATION A E

AGM20P16AS Typical Electrical and Thermal Characteristics ton toff tr tf td(on) td(off) 90% 90% VOUT INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 1 Switching Test Circuit Figure 2 Switching Waveforms T T J-Junction Temperature( ) J-Junction Temperature( ) Figure 3 Power Dissipation Figure 4 Drain Current Vds Drain-Source Voltage (V) I Drain Current (A) D-

AGM206MAP General Description The AGM206MAP combines advanced trench MOSFET technology with a low resistance package Product Summary to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 25A 20V 6m Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

AGM20T09LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 200 -- -- V GS D DSS Zero Gate Voltage Drain Current V =200V,V =0V -- -- 1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt

AGM208D General Description Product Summary The AGM208D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 6.2m 50A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c

AGM206A Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65 AGM206A Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65 AGM206A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.65

AGM20P07EL Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics -I (A) -ID (A) D 25 25 4.5V T =-55 3V A 20 20 25 15 15 125 2V 2.5V 10 10 5 5 1.5V -V (V) ( ) GS -V (V) DS 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 Figure 3 On-resistance vs. Drain Current Figure 4 Body Diode Characteristics RDS(

AGM206MDP General Description Product Summary The AGM206MDP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 60A Features Advance high cell density Trench technology DFN3*3 Pin Configuration Low R to minim

AGM204AP www.agm-mos.com 3 VER2.55 AGM204AP www.agm-mos.com 4 VER2.55 AGM204AP Figure.9 Maximum Drain Current vs. Case Temperature www.agm-mos.com 5 VER2.55 AGM204AP Fig.10 Safe Operating Area Fig. 11 Transient Thermal Response Curve www.agm-mos.com 6 VER2.55 AGM204AP PDFN3.3*3.3 Marking Instructions www.agm-mos.com 8 VER2.55 AGM204AP Disclaimer The information prov

AGM206D General Description Product Summary The AGM206D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 85A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c

AGM204A General Description Product Summary The AGM204A combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 3.1m 100A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize

AGM206AP TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature( ) TJ-Junction Temperature( ) Figure 5. VGS(th) vs Junction Temperature Figure 6. RDS(ON) vs

AGM20P30AP1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -20 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-20V,V =0V -- -- -1.0 A DS GS I DSS V = 10V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage

AGM20P30AP Typical Characteristics P-Ch 20V Fast Switching MOSFETs 20 ID=-14A 16 12 8 4 0 1 3 4 5 -VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 9 TJ=150 TJ=25 6 3 0 0 0.3 0.6 0.9 1.2 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 1.8 1 . 8 1.4 1 . 4 1 1 . 0