AGM206MAP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM206MAP General DescriptionThe AGM206MAP combines advanced trenchMOSFET technology with a low resistance packageProduct Summaryto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features25A20V 6mAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

AGM206MDP General DescriptionProduct SummaryThe AGM206MDP combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.20V4.5m 60A FeaturesAdvance high cell density Trench technologyDFN3*3 Pin Configuration Low R to minim

AGM206AFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65AGM206ATest Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65AGM206APDFN5*6 Marking Instructions:Model1:Model2:www.agm-mos.com 7 VER2.65

AGM206D General DescriptionProduct SummaryThe AGM206D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)This device is ideal BVDSS RDSON IDfor load switch and batteryprotection applications.20V 4.5m 85A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize c

AGM206APTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature() TJ-Junction Temperature() Figure 5. VGS(th) vs Junction Temperature Figure 6. RDS(ON) vs