AGM206MDP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM206MDP  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: DFN3X3

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AGM206MDP datasheet

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 agm206mdp.pdf pdf_icon

AGM206MDP

AGM206MDP General Description Product Summary The AGM206MDP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 60A Features Advance high cell density Trench technology DFN3*3 Pin Configuration Low R to minim

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 agm206map.pdf pdf_icon

AGM206MDP

AGM206MAP General Description The AGM206MAP combines advanced trench MOSFET technology with a low resistance package Product Summary to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 25A 20V 6m Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

 8.1. Size:1256K  cn agmsemi
 agm206a.pdf pdf_icon

AGM206MDP

AGM206A Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65 AGM206A Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65 AGM206A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.65

 8.2. Size:1342K  cn agmsemi
 agm206d.pdf pdf_icon

AGM206MDP

AGM206D General Description Product Summary The AGM206D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 20V 4.5m 85A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c

MOSTRAR MÁS

Otros transistores... AGM18N20H, AGM204A, AGM204AP, AGM205D, AGM206A, AGM206AP, AGM206D, AGM206MAP, 2SK2842, AGM208D, AGM20N65F, AGM20P07EL, AGM20P16AS, AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D