DMN4027SSD Todos los transistores

 

DMN4027SSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN4027SSD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
   Paquete / Cubierta: SO8

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DMN4027SSD Datasheet (PDF)

 ..1. Size:695K  diodes
dmn4027ssd.pdf

DMN4027SSD
DMN4027SSD

A Product Line ofDiodes IncorporatedDMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 5.4A Mec

 5.1. Size:676K  diodes
dmn4027sss.pdf

DMN4027SSD
DMN4027SSD

A Product Line ofDiodes IncorporatedDMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 6.1A Mechanic

 8.1. Size:464K  diodes
dmn4026sk3.pdf

DMN4027SSD
DMN4027SSD

DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5

 8.2. Size:286K  diodes
dmn4020lfde.pdf

DMN4027SSD
DMN4027SSD

DMN4020LFDE40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low On-Resistance 20m@ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim

 8.3. Size:308K  diodes
dmn4026ssd.pdf

DMN4027SSD
DMN4027SSD

DMN4026SSD40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 24m @VGS = 10V 9.0A Fast Switching Speed 40V 32m @VGS = 4.5V 7.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 8.4. Size:266K  inchange semiconductor
dmn4026sk3.pdf

DMN4027SSD
DMN4027SSD

isc N-Channel MOSFET Transistor DMN4026SK3FEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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