AGM1405C1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM1405C1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm

Encapsulados: TO220

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AGM1405C1 datasheet

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 agm1405c1.pdf pdf_icon

AGM1405C1

AGM1405C1 General Description The AGM1405C1 combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 40V 3.2m 130A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to min

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 agm1405f.pdf pdf_icon

AGM1405C1

AGM1405F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V =V

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 agm14n10d.pdf pdf_icon

AGM1405C1

AGM14N10D General Description The AGM14N10D combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 12m 50A Advance high cell density Trench technology TO-252 Pin Configuration Low R to mini

 9.2. Size:1125K  cn agmsemi
 agm14n10ap.pdf pdf_icon

AGM1405C1

AGM14N10AP Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM14N10AP PDFN3.3*3.3 Markin

MOSTRAR MÁS

Otros transistores... AGM20P07EL, AGM20P16AS, AGM20P22AS, AGM13T15A, AGM13T15C, AGM13T15D, AGM13T30A, AGM13T30D, IRFB4110, AGM1405F, AGM14N10A, AGM14N10AP, AGM14N10D, AGM150P10AP, AGM150P10D, AGM150P10S, AGM15N10AP