AGM305A Todos los transistores

 

AGM305A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM305A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 235 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: PDFN5X6
 

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AGM305A datasheet

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agm305a.pdf pdf_icon

AGM305A

AGM305A Typical electrical and thermal characteristics Figure 2 Typical Transfer Characteristics Figure 1 Typical Output Characteristics Figure 4 On-Resistance vs. Junction Figure 3 Body-Diode Characteristics Temperature Figure 5 Capacitance Characteristics Figure 6 Gate-Charge Characteristics www.agm-mos.com 3 VER2.72 AGM305A Test circuits and Waveforms Gate charge cir

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agm305ap.pdf pdf_icon

AGM305A

AGM305AP General Description The AGM305AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 4.5m 68A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to

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agm305ma.pdf pdf_icon

AGM305A

AGM305MA General Description Product Summary The AGM305MA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID switch and battery This device is ideal for load protection applications. 30V 4.6m 50A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minim

 8.2. Size:1027K  cn agmsemi
agm305d.pdf pdf_icon

AGM305A

AGM305D www.agm-mos.com 3 VER2.71 AGM305D TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics VDS Drain-to-Source Voltage(V) VGS Gate-to-Source Voltage(V) Figure 3. Max BVDSS vs Junction Temperature Figure 4. Drain Current TJ-Junction Temperature( ) TJ-Junction Temperature( ) Figure 5. VGS(th) vs Juncti

Otros transistores... AGM14N10A , AGM14N10AP , AGM14N10D , AGM150P10AP , AGM150P10D , AGM150P10S , AGM15N10AP , AGM15N10D , 10N60 , AGM305AP , AGM305D , AGM305MA , AGM306A , AGM306AP , AGM306C , AGM306D , AGM306MA .

History: KI5441DC | STN442D

 

 
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