DMN4030LK3 Todos los transistores

 ..1. Size:649K  diodes
 dmn4030lk3.pdf

A Product Line of Diodes Incorporated DMN4030LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 30m @ VGS = 10V 13.7A Qualified to AEC-Q101 Standards

 ..2. Size:266K  inchange semiconductor
 dmn4030lk3.pdf

isc N-Channel MOSFET Transistor DMN4030LK3 FEATURES Drain Current I = 9.6A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 8.1. Size:694K  diodes
 dmn4034ssd.pdf

A Product Line of Diodes Incorporated DMN4034SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 6.3A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 4.8A Me

 8.2. Size:677K  diodes
 dmn4034sss.pdf

A Product Line of Diodes Incorporated DMN4034SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 7.2A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 5.5A Mechani

 8.3. Size:404K  diodes
 dmn4031ssdq.pdf

DMN4031SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TA = +25 C (Note 7) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.8A Qualifie

 8.4. Size:424K  diodes
 dmn4031ssd.pdf

DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TA = +25 C (Note 5) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.6A Qualifie

 8.5. Size:534K  diodes
 dmn4035l.pdf

DMN4035L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV R max I max Low Input Capacitance DSS DS(ON) D Fast Switching Speed Low Input/Output Leakage 42m @ V = 10V 4.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antimony Free. Green Device (Note 3) 52m @ V = 4

 8.6. Size:645K  diodes
 dmn4036lk3.pdf

A Product Line of Diodes Incorporated DMN4036LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 36m @ VGS= 10V 12.2A Qualified to AEC-Q101 Standards for High Reliability 40V 61m @ VGS= 4.5V 9.4A Mechani

 8.7. Size:266K  inchange semiconductor
 dmn4036lk3.pdf

isc N-Channel MOSFET Transistor DMN4036LK3 FEATURES Drain Current I = 12.2A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu