AGM306MNA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM306MNA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: QFN5X6

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AGM306MNA datasheet

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AGM306MNA

AGM306MNA General Description Product Summary The AGM306MNA combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal DS(ON) BVDSS RDSON ID switch and battery protection applications. for load Features 30V 6.8m 40A Advance high cell density Trench technology QFN5*6 Pin Configuration Low R to minim

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AGM306MNA

AGM306MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 30 -- -- V Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

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AGM306MNA

AGM306MBQ Table 3. Electrical Characteristics (T =25 unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

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AGM306MNA

AGM306MA Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 1 V =10V GS 0.8 V =4.5V GS 25 0.6 0.4 0.2 0 0 0.5 1 1.5 2 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 20 2 1.5 10 1 0.5 0 0 -50 50 150 0 10 20 30 Junction Tempe

MOSTRAR MÁS

Otros transistores... AGM305MA, AGM306A, AGM306AP, AGM306C, AGM306D, AGM306MA, AGM306MBP, AGM306MBQ, 2SK3878, AGM306MNQ, AGM307MBP, AGM307MNQ, AGM312M1, AGM312M2, AGM312MAP, AGM312ME, AGM314MA