AGM312M2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM312M2

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9(6.8) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10(9) nS

Cossⓘ - Capacitancia de salida: 95(115) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022(0.045) Ohm

Encapsulados: SOP8

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AGM312M2 datasheet

 ..1. Size:1126K  cn agmsemi
 agm312m2.pdf pdf_icon

AGM312M2

AGM312M2 General Description Product Summary The AGM312M2 combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 30V 18m 9A protection applications. -30V 37m -6.8A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R t

 7.1. Size:1449K  cn agmsemi
 agm312map.pdf pdf_icon

AGM312M2

AGM312MAP Table 3. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-24V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =

 7.2. Size:1006K  cn agmsemi
 agm312m1.pdf pdf_icon

AGM312M2

AGM312M1 General Description Product Summary The AGM312M1 combines advanced trench MOSFET technology with a low resistance BVDSS RDSON ID to provide extremely low R . package DS(ON) 30V 12m 9.0A This device is ideal for load switch and battery -30V 30m -7.2A protection applications. Features SOP-8 Pin Configuration Advance high cell density Trench technology Low

 7.3. Size:2273K  cn agmsemi
 agm312me.pdf pdf_icon

AGM312M2

AGM312ME Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current -- -- nA I V = 12V,V =0V GSS GS DS 100 V Gate Threshold Voltage

MOSTRAR MÁS

Otros transistores... AGM306MA, AGM306MBP, AGM306MBQ, AGM306MNA, AGM306MNQ, AGM307MBP, AGM307MNQ, AGM312M1, IRLB4132, AGM312MAP, AGM312ME, AGM314MA, AGM314MAP, AGM314MD, AGM315MBP, AGM315MN, AGM318D