AGM318D Todos los transistores

 ..1. Size:802K  cn agmsemi
 agm318d.pdf

AGM318D 25 20 VGS= 5 10V 20 16 VGS 4V 15 12 10 8 5 4 VGS 3V 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.1 2 VG = 10V ID= 250uA 1.075 1.75 ID= 6.9A 1.05 1.5 1.025 1.25 1 1 0.975 0.75 0.95 0.5 0.925 0.25 -50 -25 0 25 50 75 100 12

 8.1. Size:1137K  cn agmsemi
 agm318map.pdf

AGM318MAP Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

 8.2. Size:788K  cn agmsemi
 agm318mn.pdf

AGM318MN General Description Product Summary The AGM318MN combines advanced trenchMOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 30V 16m 8A protection applications. Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimize conductive lo

 8.3. Size:854K  cn agmsemi
 agm318mbp.pdf

AGM318MBP General Description The AGM318MBP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 16m 8A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi