AGM15P13E Todos los transistores

 ..1. Size:1311K  cn agmsemi
 agm15p13e.pdf

AGM15P13E Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; D GS DS(on) j D V =10V GS www.agm-mos.com 3 VER2.6 AGM15P13E Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA

 6.1. Size:1309K  cn agmsemi
 agm15p13as.pdf

AGM15P13AS General Description Product Summary The AGM15P13AS combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 12m -10A Features Advance high cell density Trench technology DFN2*2 Pin Configuration Low R to minimize

 7.1. Size:1357K  cn agmsemi
 agm15p16as.pdf

AGM15P16AS General Description Product Summary The AGM15P16AS combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 13m -7.5A Features Advance high cell density Trench technology DFN2*2 Pin Configuration Low R to minimize

 8.1. Size:1200K  cn agmsemi
 agm15p22as.pdf

AGM15P22AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -16 -- -- V GS D Zero Gate Voltage Drain Current V =-16V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 8.2. Size:1601K  cn agmsemi
 agm15p30as.pdf

AGM15P30AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -15 -18 -- V GS D Zero Gate Voltage Drain Current V =-15V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltag

 8.3. Size:1281K  cn agmsemi
 agm15p30e.pdf

AGM15P30E General Description Product Summary The AGM15P30E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 34m -4.1A Features Advance high cell density Trench technology SOT-23-3 Pin Configuration Low R to minimize