AGM15T03LL Todos los transistores

 ..1. Size:1523K  cn agmsemi
 agm15t03ll.pdf

AGM15T03LL Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage 6V 100 8 ID=20A 10V 5V 80 6 4.5V 125 60 4 40 25 2 20 Vgs=4V 0 0 0 0.5 1 1.5 2 2 4 6 8 10 VDS (V) VGS (V) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. Normalized On-Resistance vs. Junction Temperature 7 2.6 ID=20A 2.4 6 2.2 VGS=10V 5 2

 7.1. Size:2043K  cn agmsemi
 agm15t06c-b.pdf

AGM15T06C-B Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 140 147 -- V GS D DSS Zero Gate Voltage Drain Current V =140V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt

 7.2. Size:1457K  cn agmsemi
 agm15t06h.pdf

AGM15T06H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 7.3. Size:1401K  cn agmsemi
 agm15t06ll.pdf

AGM15T06LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage

 7.4. Size:1427K  cn agmsemi
 agm15t06t.pdf

AGM15T06T Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 7.5. Size:1496K  cn agmsemi
 agm15t06c.pdf

AGM15T06C General Description Product Summary The AGM15T06C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 150V 6.5m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi

 7.6. Size:1439K  cn agmsemi
 agm15t05ll.pdf

AGM15T05LL Diagram 6 Gate threshold voltage vs. Diagram 5 Typ. transfer characteristics Junction temperature 18 1.3 16 1.2 14 1.1 12 1.0 125oC 25oC 10 0.9 typ 8 0.8 6 0.7 4 0.6 2 0.5 0 0.4 1 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 O VGS [V] Tj [ C] V =f(T ); I =250 A th j D I =f(V ); V =5V; parameter T D GS DS j Diagram 7 On-state resistance