AGM18N10I Todos los transistores

 

AGM18N10I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM18N10I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 338 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO251

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AGM18N10I datasheet

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AGM18N10I

AGM18N10I Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Drain-to-Source On Resistance Figure 4. Body Diode Forward Voltage vs Drain Current vs Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.agm-mos.com 3 VER2.71 AGM18N10I Figure 13. Maximum Eff

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 agm18n10ap.pdf pdf_icon

AGM18N10I

AGM18N10AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

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 agm18n10mna.pdf pdf_icon

AGM18N10I

AGM18N10MNA Typical Performance Characteristics Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain D

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 agm18n10a.pdf pdf_icon

AGM18N10I

AGM18N10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

MOSTRAR MÁS

Otros transistores... AGM15P22AS, AGM15P30AS, AGM15P30E, AGM15T03LL, AGM16N65F, AGM1810S, AGM18N10A, AGM18N10AP, 2SK3568, AGM18N10MNA, AGM18N10S, AGM30P20D, AGM30P20M, AGM310A, AGM310AP1, AGM310AS, AGM310D

 

 

 

 

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