AGM310AS Todos los transistores

 ..1. Size:865K  cn agmsemi
 agm310as.pdf

AGM310AS General Description Product Summary The AGM310AS combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 30V 6.7m 22A Features Advance high cell density Trench technology DFN2*2 Pin Configuration Low R to minimi

 7.1. Size:615K  cn agmsemi
 agm310a.pdf

AGM310A General Description Product Summary The AGM310A combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 30V 9.7m 28A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize

 7.2. Size:905K  cn agmsemi
 agm310ap1.pdf

AGM310AP1 Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 1 V =10V GS 0.8 V =4.5V GS 25 0.6 0.4 0.2 0 0 0.5 1 1.5 2 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 20 2 1.5 10 1 0.5 0 0 -50 50 150 0 10 20 30 Junction Tempe

 8.1. Size:1388K  cn agmsemi
 agm310map.pdf

AGM310MAP Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

 8.2. Size:1521K  cn agmsemi
 agm310ma.pdf

AGM310MA N Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 1 V =10V GS 0.8 V =4.5V GS 25 0.6 0.4 0.2 0 0 0.5 1 1.5 2 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 20 2 1.5 10 1 0.5 0 0 -5

 8.3. Size:902K  cn agmsemi
 agm310d.pdf

AGM310D Table 3. Electrical Characteristics (Tj=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 8.4. Size:1429K  cn agmsemi
 agm310m.pdf

AGM310M General Description Product Summary The AGM310M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery 30V 12m 12A protection applications. -30V 16m -12A Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimi

 8.5. Size:1450K  cn agmsemi
 agm310mar.pdf

AGM310MAR Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

 8.6. Size:1295K  cn agmsemi
 agm310md.pdf

AGM310MD Table 3. N- Channel Electrical Characteristics (Tj=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo