AGM215TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM215TS Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.55AGM215TSTypical Electrical And Thermal Characteristics (Curves) Figure 7. Gate C

AGM215MNE Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.68AGM215MNETypical Electrical And Thermal Characteristics (Curves) Figure 7. Gate

AGM210APElectrical Characteristics Diagrams25 25VGS = 2 V VDS = 5 V20 20VGS = 2.5 VVGS = 3 VVGS = 4.5 V15 15VGS = 1.5 V10 105 5 125 25VGS = 1 V0 00 0.5 1 1.5 2 0 1 2VGS (V)VDS (V)Figure 2: Transfer CharacteristicsFigure 1: On-Region Characteristics 201.81.6VGS = 2.5 VVGS = 4.5 V15ID = 5 A1.4VGS = 4.5 V10 1.2150.80.600 2

AGM210MAPN-Channel Typical CharacteristicsTypical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V)

AGM210STable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 20 -- -- VGS DDSSZero Gate Voltage Drain Current V =20V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =12V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM216METable 3. N- Channel Electrical Characteristics (TJ=25unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 20 -- -- VGS DDSSZero Gate Voltage Drain Current V =19.5V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current -- -- nAI V =12V,V =0VGSS GS DS100V Gate Threshold Volta

AGM218MAP General DescriptionProduct SummaryThe AGM218MAP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDdevice isThis ideal for load switch and battery20V 16m 20Aprotection applications. Features-20V 24m -19A Advance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration

AGM216MNE General DescriptionProduct SummaryThe AGM216MNE combines advanced trenchMOSFET technology with a low resistanceBVDSS RDSON IDto provide extremely low R .package DS(ON)20V 21m 3.3AThis device isideal for load switch and batteryprotection applications.SOT23-6L Pin Configuration Features Advance high cell density Trench technologyR to minimize con