AGM216ME Todos los transistores

 ..1. Size:2112K  cn agmsemi
 agm216me.pdf

AGM216ME Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 20 -- -- V GS D DSS Zero Gate Voltage Drain Current V =19.5V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current -- -- nA I V = 12V,V =0V GSS GS DS 100 V Gate Threshold Volta

 7.1. Size:1197K  cn agmsemi
 agm216mne.pdf

AGM216MNE General Description Product Summary The AGM216MNE combines advanced trench MOSFET technology with a low resistance BVDSS RDSON ID to provide extremely low R . package DS(ON) 20V 21m 3.3A This device is ideal for load switch and battery protection applications. SOT23-6L Pin Configuration Features Advance high cell density Trench technology R to minimize con

 9.1. Size:916K  cn agmsemi
 agm210ap.pdf

AGM210AP Electrical Characteristics Diagrams 25 25 VGS = 2 V VDS = 5 V 20 20 VGS = 2.5 V VGS = 3 V VGS = 4.5 V 15 15 VGS = 1.5 V 10 10 5 5 125 25 VGS = 1 V 0 0 0 0.5 1 1.5 2 0 1 2 VGS (V) VDS (V) Figure 2 Transfer Characteristics Figure 1 On-Region Characteristics 20 1.8 1.6 VGS = 2.5 V VGS = 4.5 V 15 ID = 5 A 1.4 VGS = 4.5 V 10 1.2 1 5 0.8 0.6 0 0 2

 9.2. Size:1666K  cn agmsemi
 agm210map.pdf

AGM210MAP N-Channel Typical Characteristics Typical Electrical and Thermal Characteristics (Curves) Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V)

 9.3. Size:907K  cn agmsemi
 agm210s.pdf

AGM210S Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 20 -- -- V GS D DSS Zero Gate Voltage Drain Current V =20V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 12V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 9.4. Size:1097K  cn agmsemi
 agm215ts.pdf

AGM215TS Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.55 AGM215TS Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gate C

 9.5. Size:976K  cn agmsemi
 agm215mne.pdf

AGM215MNE Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.68 AGM215MNE Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gate

 9.6. Size:2288K  cn agmsemi
 agm218map.pdf

AGM218MAP General Description Product Summary The AGM218MAP combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID device is This ideal for load switch and battery 20V 16m 20A protection applications. Features -20V 24m -19A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration