AGM30P14MBP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM30P14MBP -Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 7 Capacitance vs Vds Figure 9 Power De-rating -Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 8 Safe Operation Area Figure 10 ID Current Derating Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68C Capacitance (pF)Po

AGM30P10AFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature (C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P12D General DescriptionProduct SummaryThe AGM30P12D combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 11m -35A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minim

AGM30P110DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P100DTypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM30P100ATypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo

AGM30P18S General DescriptionProduct SummaryThe AGM30P18S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 7.0m -17A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimi

AGM30P10SR General DescriptionProduct SummaryThe AGM30P10SR combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 9.3m -15A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to mini

AGM30P110ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P16SCissVgsCossCrssQgVdsFig.3 Power Dissipation Derating Curve Fig.4 Typical output CharacteristicsV =-10VGSV =-4.5VGSFig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Currentwww.agm-mos.com 3 VER2.68AGM30P16SFig.9 Switching Time Measurement Circuit Fig.10 Gate Charge WaveformFig.11 Switching Time Measurement Circuit Fig.12 Gate

AGM30P12MFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature (C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.

AGM30P10K Typical CharacteristicsPower Capability Current Capability 60 5550504540403530302520201510105 TC=25oC,VG= -10VTC=25oC0 00 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160Tmp Mounting Point Temp. ( Tmp Mounting Point Temp. (C) C) Safe Operating Area Transient Thermal Impedance 100 21Duty = 0.51ms0.2

AGM30P10APP- Channel Typical Characteristics-3VTC=25impulse=250uS-3.5V -4.5V 25-6V-10V-2.5VVds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsVGS= 0VNoteTJ=25VGS=-4.5V25VGS=-10V-V F ,Forward Voltage [V]-I D - Drain Current (A)Figure 4. Body Diode Forward Voltage F

AGM30P18ETable 3. Electrical Characteristics (TA=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM30P16DTypical Electrical and Thermal Characteristics (Curves)-Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge -ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figu

AGM30P10S General DescriptionProduct SummaryThe AGM30P10S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and battery BVDSS RDSON IDprotection applications.-30V 12m -14A FeaturesAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimiz

AGM30P16AP General DescriptionThe AGM30P16AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features-30V 11m -21AAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R