AGM30P18S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM30P18S
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 31 nS
Cossⓘ - Capacitancia de salida: 365 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de AGM30P18S MOSFET
- Selecciónⓘ de transistores por parámetros
AGM30P18S datasheet
..1. Size:1046K cn agmsemi
agm30p18s.pdf 
AGM30P18S General Description Product Summary The AGM30P18S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 7.0m -17A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimi
6.1. Size:810K cn agmsemi
agm30p18e.pdf
AGM30P18E Table 3. Electrical Characteristics (TA=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag
7.1. Size:1340K cn agmsemi
agm30p10a.pdf
AGM30P10A Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.
7.2. Size:946K cn agmsemi
agm30p12d.pdf
AGM30P12D General Description Product Summary The AGM30P12D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 11m -35A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minim
7.3. Size:1430K cn agmsemi
agm30p110d.pdf
AGM30P110D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage
7.4. Size:1093K cn agmsemi
agm30p100d.pdf
AGM30P100D Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo
7.5. Size:1316K cn agmsemi
agm30p100a.pdf
AGM30P100A Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs.Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Vo
7.6. Size:1010K cn agmsemi
agm30p10sr.pdf
AGM30P10SR General Description Product Summary The AGM30P10SR combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 9.3m -15A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to mini
7.7. Size:1600K cn agmsemi
agm30p110a.pdf
AGM30P110A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage
7.8. Size:1436K cn agmsemi
agm30p16s.pdf
AGM30P16S Ciss Vgs Coss Crss Qg Vds Fig.3 Power Dissipation Derating Curve Fig.4 Typical output Characteristics V =-10V GS V =-4.5V GS Fig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Current www.agm-mos.com 3 VER2.68 AGM30P16S Fig.9 Switching Time Measurement Circuit Fig.10 Gate Charge Waveform Fig.11 Switching Time Measurement Circuit Fig.12 Gate
7.9. Size:1178K cn agmsemi
agm30p12m.pdf
AGM30P12M Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 VGS=-10V 1 40 0.8 30 VGS=-4.5V 0.6 20 0.4 10 0.2 0 0 0.5 1 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Junction Temperature 30 -50 50 150 0 20 -0.
7.10. Size:1044K cn agmsemi
agm30p14mbp.pdf
AGM30P14MBP -Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 7 Capacitance vs Vds Figure 9 Power De-rating -Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 8 Safe Operation Area Figure 10 ID Current Derating Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.agm-mos.com 4 VER2.68 C Capacitance (pF) Po
7.11. Size:1130K cn agmsemi
agm30p10k.pdf
AGM30P10K Typical Characteristics Power Capability Current Capability 60 55 50 50 45 40 40 35 30 30 25 20 20 15 10 10 5 TC=25oC,VG= -10V TC=25oC 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 Tmp Mounting Point Temp. ( Tmp Mounting Point Temp. ( C) C) Safe Operating Area Transient Thermal Impedance 100 2 1 Duty = 0.5 1ms 0.2
7.12. Size:1845K cn agmsemi
agm30p10ap.pdf
AGM30P10AP P- Channel Typical Characteristics -3V TC=25 impulse=250uS -3.5V -4.5V 25 -6V -10V -2.5V Vds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS= 0V Note TJ=25 VGS=-4.5V 25 VGS=-10V -V F ,Forward Voltage [V] -I D - Drain Current (A) Figure 4. Body Diode Forward Voltage F
7.13. Size:1044K cn agmsemi
agm30p16d.pdf
AGM30P16D Typical Electrical and Thermal Characteristics (Curves) -Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge -ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figu
7.14. Size:1110K cn agmsemi
agm30p10s.pdf
AGM30P10S General Description Product Summary The AGM30P10S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 12m -14A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimiz
7.15. Size:1014K cn agmsemi
agm30p16ap.pdf
AGM30P16AP General Description The AGM30P16AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features -30V 11m -21A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R
Otros transistores... AGM30P110D
, AGM30P12D
, AGM30P12M
, AGM30P14MBP
, AGM30P16AP
, AGM30P16D
, AGM30P16S
, AGM30P18E
, IRFP460
, AGM30P20AP
, AGM2N7002
, AGM2N7002K3
, AGM3005A
, AGM3012AP-CP
, AGM3015A
, AGM3015D
, AGM3015H
.
