AGM3015D Todos los transistores

 ..1. Size:1151K  cn agmsemi
 agm3015d.pdf

AGM3015D Typical Electrical and Thermal Characteristics (Curves) Vds Drain-Source Voltage (V) TJ-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6

 7.1. Size:1278K  cn agmsemi
 agm3015h.pdf

AGM3015H General Description The AGM3015H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 1.5m 138A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to mini

 7.2. Size:1196K  cn agmsemi
 agm3015a.pdf

AGM3015A Typical Electrical & Thermal Characteristics 150 30 VGS = 10V VGS = 3.5V VDS = 5.0V VGS = 5.0V VGS = 4.5V 120 24 VGS = 4.0V TJ = 125 C 90 18 60 12 VGS = 3.0V TJ = 25 C 30 6 VGS = 2.7V VGS = 2.5V 0 0 0 0.6 1.2 1.8 2.4 3 1 1.5 2 2.5 3 3.5 VDS (V) VGS (V) Figure 1 Saturation Characteristics Figure 2 Transfer Characteristics 4 2.5 3.2 2 VGS = 10V ID = 20A VG

 8.1. Size:1246K  cn agmsemi
 agm301c1.pdf

AGM301C1 General Description The AGM301C1 combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 30V 1.5m 170A Advance high cell density Trench technology TO-220 Pin Configuration Low R to minim

 8.2. Size:999K  cn agmsemi
 agm3012ap-cp.pdf

AGM3012AP-CP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 35 -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag

 8.3. Size:1330K  cn agmsemi
 agm301a1.pdf

AGM301A1 Table 3. Electrical Characteristics (T =25 unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage