DMN5L06K Todos los transistores

 

DMN5L06K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN5L06K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET DMN5L06K

 

DMN5L06K Datasheet (PDF)

 ..1. Size:170K  diodes
dmn5l06k.pdf

DMN5L06K
DMN5L06K

DMN5L06KN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage (1.0V max) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1

 7.1. Size:224K  diodes
dmn5l06.pdf

DMN5L06K
DMN5L06K

DMN5L06SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Single N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Te

 7.2. Size:367K  diodes
dmn5l06dwk.pdf

DMN5L06K
DMN5L06K

DMN5L06DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance (1.0V max) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capac

 7.3. Size:309K  diodes
dmn5l06v-va.pdf

DMN5L06K
DMN5L06K

DMN5L06V/VADUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance T

 7.4. Size:201K  diodes
dmn5l06-7.pdf

DMN5L06K
DMN5L06K

DMN5L06SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Single N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Te

 7.5. Size:484K  diodes
dmn5l06vk dmn5l06vak dmn5010vak.pdf

DMN5L06K
DMN5L06K

DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. Very Low Gate Threshold Voltage, 1.0V Max UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020

 7.6. Size:314K  diodes
dmn5l06t.pdf

DMN5L06K
DMN5L06K

DMN5L06TN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data N-Channel MOSFET Case: SOT-523 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Terminals Conn

 7.7. Size:289K  diodes
dmn5l06t-7.pdf

DMN5L06K
DMN5L06K

DMN5L06TN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data N-Channel MOSFET Case: SOT-523 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Terminals Conn

 7.8. Size:270K  diodes
dmn5l06dmk.pdf

DMN5L06K
DMN5L06K

DMN5L06DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage (1.0V max) Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capaci

 7.9. Size:127K  diodes
dmn5l06w-7.pdf

DMN5L06K
DMN5L06K

DMN5L06WLead-free GreenN-CHANNEL ENHANCEMENT MODEFIELD EFFECT TRANSISTORFeatures N-Channel MOSFETSOT-323 Low On-ResistanceDim Min Max Very Low Gate Threshold VoltageAA 0.25 0.40 Low Input CapacitanceD B1.15 1.35 Fast Switching SpeedC2.00 2.20 Low Input/Output LeakageB C Ultra-Small Surface Mount Package D0.65 NominalG S Lead Free By Design/RoHS Comp

 7.10. Size:180K  diodes
dmn5l06wk.pdf

DMN5L06K
DMN5L06K

DMN5L06WKN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage (1.0V max) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level

 7.11. Size:575K  diodes
dmn5l06dmkq.pdf

DMN5L06K
DMN5L06K

DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID max Low On-Resistance BVDSS RDS(ON) max TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 2.0 @ VGS = 5V 305mA Fast Switching Speed 50V 2.5 @ VGS = 2.5V 280mA Low Input/Output Leakage 3.0 @ VGS = 1.8V 265mA ESD Protected up to

 7.12. Size:131K  diodes
dmn5l06w.pdf

DMN5L06K
DMN5L06K

DMN5L06WLead-free GreenN-CHANNEL ENHANCEMENT MODEFIELD EFFECT TRANSISTORFeatures N-Channel MOSFETSOT-323 Low On-ResistanceDim Min Max Very Low Gate Threshold VoltageAA 0.25 0.40 Low Input CapacitanceD B1.15 1.35 Fast Switching SpeedC2.00 2.20 Low Input/Output LeakageB C Ultra-Small Surface Mount Package D0.65 NominalG S Lead Free By Design/RoHS Comp

 7.13. Size:243K  diodes
dmn5l06dw.pdf

DMN5L06K
DMN5L06K

DMN5L06DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Ter

 7.14. Size:170K  diodes
dmn5l06tk.pdf

DMN5L06K
DMN5L06K

DMN5L06TKN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Very Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity:

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