AGM308SR Todos los transistores

 ..1. Size:902K  cn agmsemi
 agm308sr.pdf

AGM308SR Fig.1 Power Dissipation Fig.2 Typical output Characteristics 1.2 200 1 150 0.8 V =10V GS 100 0.6 V =4.5V GS 0.4 50 0.2 0 0 0.5 1 1.5 2 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 6 5 2 4 1.5 3 1 2 0.5 1 0 0 0 50 100 -50 50 150 Drain Curren

 7.1. Size:1267K  cn agmsemi
 agm308s.pdf

AGM308S Fig.1 Power Dissipation Fig.2 Typical output Characteristics V =10V GS V =4.5V GS Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current Fig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperature www.agm-mos.com 3 VER2.71 AGM308S Fig.7 Switching Time Measurement Circuit Fig.8 Gate Charge Waveform Fig.9 Switching Tim

 8.1. Size:1694K  cn agmsemi
 agm308ma.pdf

AGM308MA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo

 8.2. Size:1368K  cn agmsemi
 agm308mn.pdf

AGM308MN General Description The AGM308MN combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 30V 8.8m 15A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)

 8.3. Size:1495K  cn agmsemi
 agm308a.pdf

AGM308A Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 100 100 10V 8V 80 80 3.5V 5V 60 60 40 40 3V 125 25 20 20 VGS=2.5V VGS(V) VDS(V) 0 0 0 2.0 4.0 6.0 8.0 10.0 0 1 2 3 4 5 6 Figure 3 On-resistance vs. Drain Current Figure 4 Body Diode Characteristics IS(A) RDS(ON) (m ) 14 10

 8.4. Size:1485K  cn agmsemi
 agm308mar.pdf

AGM308MAR Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

 8.5. Size:1332K  cn agmsemi
 agm308mbp.pdf

AGM308MBP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V

 8.6. Size:1351K  cn agmsemi
 agm308ap.pdf

AGM308AP General Description Product Summary The AGM308AP combines advanced trenchMOSFET technology with a low resistance to provide package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 30V 6.2m 40A protection applications. Features PDFN3.3*3.3 Pin Configuration Advance high cell density Trench technology Low R to mi