AGM30P08AP Todos los transistores

 ..1. Size:1929K  cn agmsemi
 agm30p08ap.pdf

AGM30P08AP P- Channel Typical Characteristics TC=25 impulse=250uS -4.5V -6V -10V -3.5V 25 -3V -2.5 V -Vds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Note TJ=25 VGS= 0V 25 VGS= -4.5V VGS= -10V -ID - Drain Current (A) -VF ,Forward Voltage (V) Figure 3. On-Resistance Variation vs F

 5.1. Size:2125K  cn agmsemi
 agm30p08a.pdf

AGM30P08A General Description The AGM30P08A combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -30V 7.0m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration R to minimize con

 6.1. Size:1968K  cn agmsemi
 agm30p08d.pdf

AGM30P08D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V

 7.1. Size:1980K  cn agmsemi
 agm30p05ap.pdf

AGM30P05AP General Description The AGM30P05AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features -30V 5.5m -60A Advance high cell density Trench technology Low R to minimize conductive loss D

 7.2. Size:2001K  cn agmsemi
 agm30p05d.pdf

AGM30P05D General Description The AGM30P05D combines advanced trench MOSFET technology with a low resistance package Product Summary to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features Advance high cell density Trench technology -30V 5.5m -75A Low R to minimize conductive loss DS(

 7.3. Size:2162K  cn agmsemi
 agm30p05a.pdf

AGM30P05A General Description The AGM30P05A combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features -30V 5.5m -75A Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to mi