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AGM3400EL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM3400EL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 229 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOT23
 

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AGM3400EL Datasheet (PDF)

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AGM3400EL

AGM3400ELTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =12V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

 6.1. Size:1800K  cn agmsemi
 agm3400e.pdf pdf_icon

AGM3400EL

AGM3400E Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3: On-Resistance vs. Drain Current Figure 4: On-Resistance vs. Junction Temperature and Gate Voltage Figure5. Capacitance Characteristics Figure6. Gate Charge www.agm-mos.com 3 VER2.71AGM3400EFigure7. Safe Operation Area Figure8. Maximum Continuous Drain

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 agm3404e.pdf pdf_icon

AGM3400EL

AGM3404ETable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

 8.2. Size:1748K  cn agmsemi
 agm3404el.pdf pdf_icon

AGM3400EL

AGM3404ELTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

MOSTRAR MÁS

Otros transistores... AGM30P05AP , AGM30P05D , AGM30P08A , AGM30P08AP , AGM30P08D , AGM30P100A , AGM30P100D , AGM30P10A , AON6380 , AGM3401E , AGM3404E , , , , , , .

 

 
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