AGMH035N10A Todos los transistores

 ..1. Size:1919K  cn agmsemi
 agmh035n10a.pdf

AGMH035N10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volta

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 agmh035n10h.pdf

AGMH035N10H General Description The AGMH035N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 3.5m 160A Advance high cell density Trench technology TO-263 Pin Configuration Low R to

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 agmh035n10c.pdf

AGMH035N10C General Description Product Summary The AGMH035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 3.6m 150A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R t

 8.1. Size:1277K  cn agmsemi
 agmh03n85c.pdf

AGMH03N85C Figure 5. Transient Thermal Impedance Figure 7. Source-Drain Diode Forward Figure 6. Typical Transfer Characteristics Characteristics Figure 13. Typical Gate Charge vs Gate-Source Figure 12. Capacitance Characteristics Voltage www.agm-mos.com 4 VER2.73 AGMH03N85C Test Circuit and Waveform Figure 14. Resistive Switching Test Circuit Figure 15. Resistive Switching Wav