AGMH056N08HM1 Todos los transistores

AGMH056N08HM1 Typical Characteristics 3.9 80 Notes 10V,9V,8V,7V,6V IDS= 250uA 1. 250 s pulse test 3.6 2. Tj=25 C 3.3 60 3.0 Max 2.7 Typ 2.4 40 VGS= 5V 2.1 Min 1.8 20 1.5 VGS= 4.5V 1.2 0.9 0 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -So

AGMH056N08A Typical Characteristics 3.9 80 Notes 10V,9V,8V,7V,6V IDS= 250uA 1. 250 s pulse test 3.6 2. Tj=25 C 3.3 60 3.0 Max 2.7 Typ 2.4 40 VGS= 5V 2.1 Min 1.8 20 1.5 VGS= 4.5V 1.2 0.9 0 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -Sour

AGMH056N08C Typical Characteristics 3.9 80 Notes 10V,9V,8V,7V,6V IDS= 250uA 1. 250 s pulse test 3.6 2. Tj=25 C 3.3 60 3.0 Max 2.7 Typ 2.4 40 VGS= 5V 2.1 Min 1.8 20 1.5 VGS= 4.5V 1.2 0.9 0 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -Sour

AGMH03N85C Figure 5. Transient Thermal Impedance Figure 7. Source-Drain Diode Forward Figure 6. Typical Transfer Characteristics Characteristics Figure 13. Typical Gate Charge vs Gate-Source Figure 12. Capacitance Characteristics Voltage www.agm-mos.com 4 VER2.73 AGMH03N85C Test Circuit and Waveform Figure 14. Resistive Switching Test Circuit Figure 15. Resistive Switching Wav

AGMH035N10H General Description The AGMH035N10H combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 100V 3.5m 160A Advance high cell density Trench technology TO-263 Pin Configuration Low R to

AGMH022N10LL Typical Electrical and Thermal Characteristics Vds Drain-Source Voltage (V) T J-Junction Temperature( ) Figure 1 Output Characteristics Figure 4 Rdson-Junction Temperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge I Drain Current (A) Vsd Source-Drain Voltage (V) D- Figure 3 Rdson- Drain Current Figure 6 Sourc

AGMH035N10C General Description Product Summary The AGMH035N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 100V 3.6m 150A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R t

AGMH065N10A General Description Product Summary The AGMH065N10A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 100V 5.8m 95A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R t

AGMH035N10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 100 -- -- V GS D DSS Zero Gate Voltage Drain Current V =100V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volta

AGMH022N10H General Description Product Summary The AGMH022N10H combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery for load BVDSS RDSON ID protection applications. 100V 2.2m 220A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R

AGMH022P10H General Description Product Summary The AGMH022P10H combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -100V 15m -65A protection applications. TO-263 Pin Configuration Features Advance high cell density Trench technology R to minimize c