AGMH18N20C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGMH18N20CTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -- VGS DDSS200 --Zero Gate Voltage Drain Current V =200V,V =0V -- 1 ADS GSI --DSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V =

AGMH12N10C General DescriptionProduct SummaryThe AGMH12N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 9.6m 55A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to m

AGMH1405C General DescriptionThe AGMH1405C combines advanced trenchProduct SummaryMOSFET technology with a low resistance package to provideextremely low R .DS(ON)This device is ideal for load switch and batteryBVDSS RDSON IDprotection applications.45V 2.8m 100A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to mi

AGMH10P15D General DescriptionProduct SummaryThe AGMH10P15D combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.-150V 320m -10A FeaturesTO-252 Pin Configuration Advance high cell density Trench technologyLow R to minimi

AGMH10P15C General DescriptionProduct SummaryThe AGMH10P15C combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.-150V 310m -10A FeaturesTO-220 Pin Configuration Advance high cell density Trench technologyLow R to minimi

AGMH12N10ICharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10IGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

AGMH12N10DCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10DAGMH12N10DGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

AGMH12H05H General DescriptionProduct SummaryThe AGMH12H05H combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 4.5m 125A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to