AGM3416E Todos los transistores

 ..1. Size:871K  cn agmsemi
 agm3416e.pdf

AGM3416E Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.68 AGM3416E Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gate C

 0.1. Size:868K  cn agmsemi
 agm3416el.pdf

AGM3416EL Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.68 AGM3416EL Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gate

 8.1. Size:883K  cn agmsemi
 agm3415e.pdf

AGM3415E Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics -I (A) D -I (A) D 20 20 16 16 VGS=- 100 4.5V 12 12 VGS=-3V 25 -2V 8 8 4 4 -1.5V -V (V) GS -V (V) DS 0 0 0 1 2 3 4 5 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 Figure 3 On-resistance vs. Drain Current Figure 4 Body Diode Characteristics I (A

 9.1. Size:1838K  cn agmsemi
 agm3404e.pdf

AGM3404E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 9.2. Size:1777K  cn agmsemi
 agm3400el.pdf

AGM3400EL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 12V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 9.3. Size:1748K  cn agmsemi
 agm3404el.pdf

AGM3404EL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 9.4. Size:975K  cn agmsemi
 agm3407e.pdf

AGM3407E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag

 9.5. Size:1800K  cn agmsemi
 agm3400e.pdf

AGM3400E Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure 3 On-Resistance vs. Drain Current Figure 4 On-Resistance vs. Junction Temperature and Gate Voltage Figure5. Capacitance Characteristics Figure6. Gate Charge www.agm-mos.com 3 VER2.71 AGM3400E Figure7. Safe Operation Area Figure8. Maximum Continuous Drain

 9.6. Size:882K  cn agmsemi
 agm3401e.pdf

AGM3401E General Description Product Summary The AGM3401E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. -30V 43.5m -4.4A Features SOT23-3 Pin Configuration Advance high cell density Trench technology Low R to m