AGM628MAP Todos los transistores

 ..1. Size:1557K  cn agmsemi
 agm628map.pdf

AGM628MAP Table 3. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -60 -- V -- Zero Gate Voltage Drain Current V =-60V,V =0V -1 DS GS I -- -- DSS A Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- GSS nA V Gate Threshold Voltage V

 7.1. Size:1099K  cn agmsemi
 agm628mn.pdf

AGM628MN General Description Product Summary The AGM628MN combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 60V 26m 8A Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize con

 7.2. Size:1456K  cn agmsemi
 agm628m.pdf

AGM628M General Description Product Summary The AGM628M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) device is This ideal for load switch and battery 60V 30m 6.8A protection applications. -60V 53m -5.7A Features SOP8 Pin Configuration Advance high cell density Trench technology R to mini

 7.3. Size:1599K  cn agmsemi
 agm628md.pdf

AGM628MD Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo