AGM628S Todos los transistores

AGM628S Typical Characteristics (cont.) Output Characteristics On Resistance 50 40 VGS= 4,5,6,7,8,9,10V 45 35 40 30 VGS= 4.5V 35 25 VGS=10V 30 20 25 15 20 10 3V 15 5 2V 10 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 5 10 15 20 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 200 1.6 IDS= 250 A IDS=10A

AGM628MAP Table 3. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -60 -- V -- Zero Gate Voltage Drain Current V =-60V,V =0V -1 DS GS I -- -- DSS A Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- GSS nA V Gate Threshold Voltage V

AGM628DM1 General Description Product Summary The AGM628DM1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 60V 31m 20A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi

AGM628AP General Description The AGM628AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 26m 23A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to m

AGM628D General Description The AGM628D combines advanced trenchMOSFET Product Summary to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 60V 26m 30A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize

AGM628MN General Description Product Summary The AGM628MN combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 60V 26m 8A Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize con

AGM628M General Description Product Summary The AGM628M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) device is This ideal for load switch and battery 60V 30m 6.8A protection applications. -60V 53m -5.7A Features SOP8 Pin Configuration Advance high cell density Trench technology R to mini

AGM628MD Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo